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dc.contributor.advisorVolkmann, Ulrich G.
dc.coverage.spatialSantiago
dc.creatorDel Campo-Sfeir, Valeria Isabel
dc.date.accessioned2017-03-23T20:41:37Z
dc.date.available2017-03-23T20:41:37Z
dc.date.issued2009
dc.identifierhttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/
dc.identifier.urihttp://hdl.handle.net/10533/178926
dc.description.abstractIn this work we present studies of thin n-dotriacontane (C32) films deposited by physical vapor deposition (PVD) onto Si(JOO) substrates with their native silicon oxide layer. To have a good comprehension of this system we studied importani properties of the film due to the interaction with the substrate. We analyzed the growth mode of the film during deposition. the structure of the samples after deposited, the phase transitions in temperature. and the desorption kinetics of the system. To study the films growth during deposition, we monitored in-silu and in real time the adsorption of the molecules with high-resolution ellipsometry. We have found that the increase in roughness during film growth depends on the deposition rate and on the substrate temperature. The structure of the vapor-deposited films vas studied by Atomic Force Microscopy (AFM) and x-ray reflectivity (XRR). Films grew with a bilayer adjacent to the S102surface in which the C32 molecules are aligned with their long axis parallel to the interface followed by upper layers of perpendicular molecules. The occupancy of the layers depends mainly on the substrate temperature during deposition. Using AFM and XRR. we also studied phase transitions of the alkane films. We found that the perpendicular layers are unstable to the formation of bulk particles when sample is heated aboye the bulk melting temperature. We observed that on heating, but below bulk melting point, the perpendicular layers of the film present a lessening in thickness. We were also able to obtain information from a transition of the parallel bilayer that occurs ahoye the hulk melting temperature. Finaily. we investigated the desorption kinetics of C32 films from the Si0 2 surface in thermally programmed desorption experiments. We found that the desorption mechanism of the parallel layer adjacent to the substrate is divided into two steps.
dc.language.isoeng
dc.relationinstname: Conicyt
dc.relationreponame: Repositorio Digital RI2.0
dc.relationinstname: Conicyt
dc.relationreponame: Repositorio Digital RI2.0
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Chile
dc.titleGrowth, structure, phase transitións and desorptión kinetics of n-dotriacontane films
dc.typeTesis Doctorado
dc.description.degreeDoctor en Física
dc.contributor.institutionPontificia Universidad Católica de Chile
dc.identifier.folio21050541
dc.description.statusTERMINADA
dc.country.isochi
dc.description.conicytprogramPFCHA-Becas
dc.description.pages132p.
dc.relation.projectidinfo:eu-repo/grantAgreement/PFCHA-Becas/21050541
dc.relation.setinfo:eu-repo/semantics/dataset/hdl.handle.net/10533/93488
dc.rights.driverinfo:eu-repo/semantics/openAccess
dc.type.driverinfo:eu-repo/semantics/doctoralThesis
dc.relation.programhandle/10533/108040
dc.description.shortconicytprogramPFCHA-Becas
dc.type.tesisTesis
dc.type.openaireinfo:eu-repo/semantics/publishedVersion


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